CSG10 series specification
Material
Single Crystal Silicon, N-type, 0.01-0.025 Ohm-cm, Antimony doped
Chip size
3.4x1.6x0.3mm
Reflective side
Au
Cantilever number
1 rectangular
Tip curvature radius
typical 6nm, guaranteed 10nm
Also available coatings
conductive TiN, PtIr; Au
Available CSG10 probe
bare, tipless, with Al reflective coating
Cantilever series
Cantilever length, L±5µm
Cantilever width, W±3µm
Cantilever thickness,
T±0.5 µm
Resonant frequency, kHz
Force constant, N/m
min
typical
max
CSG10
225
30
1.0
8
22
39
0.01
0.11
0.5